Abstract

The quadrature squeezing of a mechanical resonator (MR) coupled with two quantum dots (QDs) through the electromechanical coupling, where the QDs are driven by a strong and two weak laser fields is investigated. By tuning the gate voltage, the electron can be trapped in a quantum pure state. Under certain conditions, the discrepancies between the transition frequency and that of two weak fields are compensated by the phonons induced by the electromechanical coupling of the MR with QDs. In this case, some dissipative processes occur resonantly. The phonons created and (or) annihilated in these dissipative processes are correlated thus leading to the quadrature squeezing of the MR. A squeezed vacuum reservoir for the MR is built up. By tuning the gate voltage to control the energy structure of the QDs, the present squeezing scheme has strong resistance against the dephasing processes of the QDs in low temperature limit. The role of the temperature of the phonon reservoir is to damage squeezing of the MR.

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