Abstract
Using two high electron mobility transistor (HEMT)-based technologies, divide-by-two quadrature regenerative frequency dividers (RFDs) are demonstrated. One is the 0.15-μm AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) technology with 85-GHz cutoff frequency and the other is the 0.15-μm InAlAs/InGaAs metamorphic HEMT (mHEMT) technology with 110-GHz cutoff frequency. The demonstrated 22~26-GHz pHEMT quadrature RFD consumes 28.4 mA at the supply voltage of 7 V while the 36.5~38.1-GHz mHEMT one consumes 16.9 mA at the supply voltage of 6V. Thus, the mHEMT quadrature RFD operates at high frequency and has lower power consumption as compared to the pHEMT one.
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