Abstract
Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for Metal-Ferroelectric-Semiconductor FET (MFSFET) devices. PZT based MFS capacitors using lead titanate (PT) as seeding layers have been respectively prepared on p-type ⟨111⟩ and n-type ⟨100⟩ silicon wafers directly by a sol-gel method. PZT/PT films are final annealed at 650°C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 V and 5 V under the polarization voltages of ±5 V and ±10 V correspondingly. The MFS structure can be valuable for MFSFET applications.
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