Abstract
The built-in-polarization (BIP) of Inx Ga1-x N/GaN heterostructure modifies phonon mean free path and thermal conductivity of heterostructures at room temperature. The variation of thermal conductivity (k) with temperature for including and excluding BIP mechanism of the heterostructures predicts the existence of a transition temperature between primary and secondary pyroelectric coefficient. Below this temperature, k with BIP field is lower than k without BIP field; while above this temperature k is significantly contributed by BIP mechanism due to thermal expansion. This study suggests that thermal conductivity measurement can reveal role of phonons and pyroelectricity in InxGa1-xN alloy. The primary pyroelectric transition temperature of InxGa1-xN alloy has been predicted for different x which are in line with prior studies. The result will be useful for designing of pyroelectric sensors from InxGa1-xN/GaN heterostructures.
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