Abstract
The built-in-polarization (BIP) enhances Debye temperature, phonon mean free path and thermal conductivity of InN/GaN heterostructures at room temperature. The variation of thermal conductivity (k)with temperature for with and without BIP mechanism in heterostructurespredicts the existence of a transition temperature (Tp) between primary and secondary pyroelectric coefficient. Below Tp,k with BIP field is lower than k without BIP field; while above this temperature k is significantly contributed by BIP mechanism due to thermal expansion. This study suggests that thermal conductivity measurement can reveal role of phonons and pyroelectricity in InN/GaN heterostructures. The primary pyroelectric transition temperature of InN has been predicted as 70K which is in line with prior studies. The result will be useful for designing of pyroelectric sensors from InN/GaN heterostructures.
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