Abstract
Infrared detectors consisting of thin film PbZrTiO 3/YBa 2Cu 3O 7−x oxide-heterostructures have been fabricated. The YBCO thin film used as the bottom conductive electrode significantly increases the performance of pyroelectric IR detector. Detectivity values of ∼10 8 cm Hz 1 2 / W at room temperature have been obtained for simple heterostructure device configurations in IR-wavelength range of 1 μm to 20 μm. Reactive ion etching (RIE) has been used to etch the YBCO and the other oxide layers for the development of an air bridge structure which further reduces thermal mass and increases the operation frequency of the IR detector.
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