Abstract
Highly c-axis oriented La-modified PbTiO3(Pb1-xLaxTi1-x/4O3;PLT) thin films were successfully grown on MgO single crystal substrates by rf-magnetron sputtering method. The PLT thin films display the phenomenon named “self-polarization” and have high figures of merit for pyroelectric infrared(IR) sensor without a poling treatment. It was found that this self-polarization depends on the substrate temperature and is based on a fairly small difference of the thin film composition:Pb/Ti. High performance IR sensors were fabricated by using the PLT (x=0.1, γ=5.5 × 10-8 C/cm2K, εr=180) thin films and a new 3-dimensional structure. The sensors have remarkably high D* of 3.5 × 108cmHz1/2/W and very fast response
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