Pyroelectric LiTaO3 Thin Films Elaborated by RF Magnetron Sputtering on RuO2/SiNx

Abstract

LiTaO 3 thin films were deposited on RuO 2 electrode by RF magnetron sputtering with a Li 2 O 2 /Ta 2 O 5 (50%–50%) target. This article presents a morphological, structural, dielectric and pyroelectric study of LiTaO 3 thin films. The originality of this work resides on the choice of the substrate: silicon nitride on Si (SiN x /Si) membrane. The final aim is to improve the pyroelectric coefficient for infrared pyroelectric detectors applications. The best pyroelectric coefficient of LiTaO 3 thin films (400 nm) is equal to 60 μC/m 2 K. It was obtained for deposited temperature of 400°C, and a pressure of 10 mTorr.