Abstract
Molecular semiconductors that possess electric field induced switching of resistivity have been of great interest as they are excellent candidates for bi-stable resistive memory devices. The supremacy of such devices lies in the reversibility and non-volatile nature of the recorded information. Herein, we have demonstrated a new class of semiconductors that execute reversible non-volatile memory in the fabricated flexible devices with low switching threshold voltages, high ON/OFF ratios and good ambient stability.
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