Abstract

Abstract. For the first time carbon nanotube (CNT) transistor based adiabatic logic (AL) was analyzed in this work and compared to CNT based static CMOS (CCNT). Static CCNT inverters are used as a reference and compared to inverters in the AL families Efficient Charge Recovery Logic (ECRL) and Positive Feedback Adiabatic Logic (PFAL) in terms of energy dissipation. Energy savings by adiabatic logic in dependence of operating frequency, supply voltage and number of nanotubes per transistor are reviewed. It is shown that CNT based AL circuits provide high energy saving factors even for high frequencies compared to CNT based static CMOS circuits.

Highlights

  • Static CCNT inverters are used as a reference and compared to inverters in the adiabatic logic (AL) families Efficient Charge Recovery Logic (ECRL) and Positive Feedback Adiabatic Logic (PFAL) in terms of energy dissipation

  • It is shown that carbon nanotube (CNT) based AL circuits provide high energy saving factors even for high frequencies compared to CNT based static CMOS circuits

  • Single Wall Carbon Nanotubes (SWCNT) have a high mobility in the order of 100 000 cm−2 Vs−1 and a conductivity of up to 400 000 S cm−1 (Hecht, 2007), due to the 1-D transport and reduced phase space for scattering leading to ballistic transport (Javey and Dai, 2006). Though these facts are very convincing, a lot of barriers have to be overcome before MOSFETs made out of SWCNTs can be produced on a large scale

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Summary

Motivation

Aggressive scaling of bulk MOSFETs has led to problems occurring due to increased short-channel-effects (SCE), leakage currents, and due to fabrication limitations. Single Wall Carbon Nanotubes (SWCNT) have a high mobility in the order of 100 000 cm−2 Vs−1 and a conductivity of up to 400 000 S cm−1 (Hecht, 2007), due to the 1-D transport and reduced phase space for scattering leading to ballistic transport (Javey and Dai, 2006) Though these facts are very convincing, a lot of barriers have to be overcome before MOSFETs made out of SWCNTs can be produced on a large scale. The losses in AL do depend on the capacitance C and the voltage supply VDD and on the path resistance R and the period T of the operating frequency Due to their superior electrical characteristic, the high conductivity resulting from a (near-)ballistic transport, carbon nanotubes are interesting candidates for future large scale integration circuits; their capabilities allow for lowest consumption especially in Adiabatic Logic. For the properties of CNTs will briefly be presented, and later on, simulations are carried out with the Stanford CNT Hspice simulation model (Deng et al, 2008; Deng and Wong, 2007a,b) to see how Adiabatic Logic performs with those future devices

The chirality of a CNT and the CNTFET
R2 and
Simulation results
Findings
Summary and conclusions
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