Pump power dependence of the electron-hole plasma luminescence in Ga-doped ZnO film

Abstract

Time resolved two-photon absorption induced electron-hole plasma (EHP) luminescence of Ga-doped ZnO thin film was measured by an ultrafast optical Kerr gate (OKG) in femtosecond time regime. Experimental results showed that the buildup time of the EHP luminescence was strongly dependent on the excitation fluence. The dependence of the buildup time of EHP on excitation fluence probably arose mainly from the relaxation of the hot carriers due to the carrier–carrier interaction, which increased with the increase of excitation fluence.