Abstract
Population relaxation dynamics of the short-wavelength (∼2.5 μm) intersubband transition (ISB-T) in narrow InGaAs/AlAs quantum wells is investigated. Femtosecond (∼100 fs) pump and probe measurement yields a relaxation time of ∼2.7 ps, which is as fast as those observed for 10–5 μm ISB-T (0.7–1.5 ps, respectively). The ISB relaxation time increases more rapidly than that predicted from the usual intersubband optical-phonon scattering model as the ISB-T energy increases. Our theoretical calculation, which takes into account the intrasubband energy relaxation process, agrees well with the experimental results. The intrasubband energy relaxation process is found to be important in the short-wavelength region.
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