Pulsed-bias pulsed-RF harmonic load pull for Gallium Nitride (GaN) and wide band-gap (WBG) devices

Abstract

For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. I V, S-Parameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.