Abstract
The development of wide bandgap (WBG) devices in recent years, such as silicon carbide (SiC) and gallium nitride (GaN) power devices, has resulted in power converters with power densities and efficiencies that are not possible with traditional silicon (Si) devices. While the fast switching speed of WBG devices enables higher converter efficiency and power density, a number of issues are created such as increased sensitivity to parasitics, EMI noise, high voltage and current overshoot and ringing, and heat centralization in semiconductor devices. Resonant and soft-switching techniques can be effective in resolving these issues and allow even higher power densities and efficiencies to be achieved.
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