Abstract
The development of wide bandgap (WBG) devices in recent years, such as silicon carbide (SiC) and gallium nitride (GaN) power devices, has resulted in power converters with power densities and efficiencies that are not possible with traditional silicon (Si) devices. While the fast switching speed of WBG devices enables higher converter efficiency and power density, a number of issues are created such as increased sensitivity to parasitics, EMI noise, high voltage and current overshoot and ringing, and heat centralization in semiconductor devices. Resonant and soft-switching techniques can be effective in resolving these issues and allow even higher power densities and efficiencies to be achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Emerging and Selected Topics in Power Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
