Pulsed particle beam treatment of implanted silicon

Abstract

The formation of heavily doped silicon layers by P +, B +, In + ion implantation and their further treatment by powerful nanosecond (50 ns) ion pulses and microsecond (1.5 μs) electron pulses has been investigated. The concentration, mobility and depth distribution of the charge carriers have been measured. Transmission electron microscopy (TEM) is applied to investigate the layer structure. The use of particle beams allows control over large intervals of the depth distribution (∼ 2 μm) and formation of highly conducting layers (5 ω □ −1) with P and B concentrations exceeding the equilibrium solubility. The experimental results have been compared with those involving laser treatment and calculations of temperature fields.