Abstract
In this report we investigate the effects of pulsed laser annealing (PLA) on both as-electrodeposited (ED) and electrodeposited-furnace annealed (EDA) CuInSe 2 (CIS) samples by varying the laser fluence (J/cm2) and number of pulses. Results for as-ED samples indicate that liquid CIS-phase formation during PLA with 248 nm laser is to be avoided as liquid CIS dewets on Mo [1] as well as MoSe 2 . In the case of EDA-PLA samples, scanning electron microscopy (SEM) images suggest no apparent change in surface morphology but photoluminescence (PL) indicates change in PL yield and FWHM after PLA processing, a possible indication of annealing of defect states. The effects of PLA on defects are further explored using deep level transient spectroscopy (DLTS).
Published Version
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