Abstract
Zinc gallate (ZnGa 2O 4) phosphor thin films have been deposited by pulsed laser deposition (PLD) technique on amorphous silica and glass substrates at room temperature at various oxygen pressures. The films were deposited from presintered targets prepared by solid-state reaction of constituent oxides at elevated temperature. The photoluminescent (PL) emission studies on manganese-doped zinc gallate powder phosphors show green emission (504 nm) having maximum luminescence for a Mn concentration of 2 at.%. The films deposited under different deposition condition have been characterized using X-ray diffraction studies and PL measurements. The crystallinity of the ZnGa 2O 4 films is highly dependent on deposition conditions. Under optimized deposition condition crystalline ZnGa 2O 4 were grown on amorphous silica substrates at room temperature.
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