Abstract
In0.1Ga0.9N thin film was grown on a cheap glass substrate by the Nd:YAG pulsed laser deposition technique. The In0.1Ga0.9N thin films show the semi-crystalline structure as observed with X-ray diffraction (XRD). The surface morphology has a non-dense layer with both scattered nanospheres and agglomerated particles. These nanospheres tended to grow randomly on the glass substrate, as observed with field emission scanning electron microscopy (FESEM). The direct bandgap energy for In0.1Ga0.9N thin film was 2.08 eV, which is calculated using photoluminescence (PL) measurements. The Raman measurements illustrated two sets of phonon modes as A1(LO) and E2 high vibrational modes that are observed. The resonance behavior of the A1(LO) mode is experimentally verified and studied under laser light energy of 532 nm.
Highlights
The III-nitrides, such as InN, GaN and AlN, have recently received great attention because of their major contribution to various optoelectronic applications such as light-emitting and laser diode applications [1]
The Inx Ga1−x N thin films have been prepared by several techniques such as molecular beam epitaxy (MBE), hybrid vapor phase epitaxy (HVPE), and pulsed laser deposition (PLD) [6]
Most of the Inx Ga1−x N targets used in PLD are fabricated by pressing the alloy powders at high pressure, followed by sintering at high temperatures [8]
Summary
The III-nitrides, such as InN, GaN and AlN, have recently received great attention because of their major contribution to various optoelectronic applications such as light-emitting and laser diode applications [1]. The structures of these materials depend on the stoichiometry of the elements and preparation conditions [2]. The binary nitrides crystallize in the wurtzite (wz) structure and show the lowest direct optical transition across their fundamental band gaps of 0.7 eV (InN), 3.5 eV (GaN) and 6 eV (AlN) [4] These alloys cover the electromagnetic spectrum from the infrared to the ultraviolet [5]. Inx Ga1−x N will be deposited for the first time by an Nd:YAG laser technique on glass substrate, giving a yellow emission that could be used in LED applications
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