Abstract
Thin indium tin oxide (ITO) films have been grown on quartz glass substrates by pulsed laser deposition. The influence of ablation target composition and deposition conditions on the growth rate, optical transmission spectra, and carrier mobility and concentration of the films has been examined. The average surface roughness of the ITO films grown at substrate temperatures above 300°C is 2 nm. The films grown at an oxygen partial pressure of 5 mTorr using ablation targets with Sn/(In + Sn) = 5% possess high transmission (85-95%) in the visible range and low resistivity (1.8 × 10−4 Ω cm).
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