Abstract
Pulsed laser depositions of CdWO 4 thin films are carried out in the presence of O 2 using targets of CdWO 4(010) single crystals and pressed CdO and WO 3 powder mixtures. CdWO 4(002) peaks are observed on Si(111), CaF 2(111), mica(001) and glass substrates by ablating CdWO 4(010) single crystals. CdWO 4(002) and (111) peaks are detected in the films prepared on glass substrate using CdO and WO 3 mixed powders and the relative XRD intensities change as a function of atomic ratio of CdO to WO 3 used. The thin film with the stoichiometric composition of CdWO 4 can be prepared by selecting appropriate CdO WO 3 ratio in the mixed oxide target and the film shows a photoluminescence similar to CdWO 4.
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