Abstract
Vanadium pentoxide (V2O5) thin films have been deposited by reactive direct current (DC) magnetron sputtering onto glass and Si (100) substrates in identical deposition conditions and investigated for their physical properties. The films deposited on glass substrates were amorphous whereas the film deposited on Si substrates were polycrystalline (orthorhombic crystal structure and strong (411) orientation plane). The core level spectrum of the film showed V2p1/2 and V2p3/2 peaks at the binding energy 517.18 and 524.38 eV respectively whichconfirmed the presence of V2O5. The films exhibited a nanosheet-like surface morphology grown normal to the substrate (Si and Glass). The optical bandgap value of the films deposited on glass and Si substrates was found to be in the range of 2.5–3.49 eV and 1.72–2.45 eV respectively. V2O5 films deposited on glass and Si (100) exhibited a temperature coefficient of resistance (TCR) of −0.6 and −1.8%/°C respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
