Abstract
BaSn0.15Ti0.85O3 (BTS) thin films were deposited on Pt/Ti/SiO2/Si(1 0 0) substrate by pulsed laser deposition and the effects of substrate temperature on their structure, dielectric properties and leakage current density were investigated. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of the BTS thin films which exhibit a polycrystalline perovskite structure if the substrate temperature ranges within 550–750°C. The dielectric constant and loss tangent of the BTS thin films deposited at 650°C are 341 and 0.009 at 1MHz, respectively, the tunability is 72.1% at a dc bias field of 400kV/cm, while the largest figure of merit (FOM) is 81.1. The effect of the substrate temperature on the leakage current of the BTS thin films is discussed.
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