Abstract
The dependence of dielectric properties on the substrate temperature of the Bi1.5MgNb1.5O7 (BMN) thin films prepared on Au-coated Si substrates by the pulsed laser deposition technique has been investigated. It is shown that the substrate temperature has a significant effect on the structural and dielectric properties of BMN thin films. The deposited BMN thin films had a cubic pyrochlore phase when deposited at 600 °C or higher. A BMN thin film with an optimal substrate temperature of 700 °C has a medium dielectric constant of 106, a high tunability of 22.1% and a low loss tangent of 0.003. In addition, the effect of the substrate temperature on the leakage current of the thin films was also discussed.
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