Pulsed laser deposition and characterization of nitrogen-substituted SrTiO 3 thin films

Abstract

Nitrogen-substituted cubic perovskite-type SrTiO 3 thin films were deposited in a one-step process using pulsed reactive crossed beam laser ablation (PRCLA) and RF-plasma assisted pulsed laser deposition (RF-PLD). Both techniques yield preferentially oriented films on SrTiO 3(0 0 1), LaAlO 3(0 0 1) and MgO(0 0 1) substrates with the unit cell parameters within 0.390(5) < a < 0.394(9) nm. The nitrogen content is higher in films deposited by PRCLA (0.84–2.40 at.%) as compared to films deposited by RF-PLD with nitrogen plasma (0.10–0.66 at.%). PRCLA with an ammonia gas pulse leads to a higher nitrogen content compared to the films grown with a nitrogen gas pulse, while films deposited by RF-PLD with ammonia plasma reveal only minor nitrogen contents (<0.10 at.%). The amount of the incorporated nitrogen can be tuned by adjusting the deposition parameters. Films deposited by PRCLA have a lower roughness of 1–3 nm compared to 12–18 nm for the films grown by RF-PLD. PRCLA yields partially reduced films, which exhibit electronic conductivity, while films deposited by RF-PLD are insulating. There is also a pronounced influence of the substrate material on the resistivity of the films deposited by PRCLA: films grown on SrTiO 3 substrates exhibit a metallic-like behaviour, while the corresponding films grown on MgO and LaAlO 3 substrates reveal a metal-to-semiconductor/insulator transition. Nitrogen incorporation into the SrTiO 3 films results in an increased optical absorption at 370–500 nm which is associated with N(2p) localized states with the energy about 0.7 eV higher than the valence band energy in strontium titanate. The optical band gap energies in the studied N-substituted SrTiO 3 films are 3.35–3.40 eV.