Abstract
AbstractThin films of SiO2:Ce,Tb (Ce = Tb = 0.5 mol%) nanoparticulate phosphor (nanophosphor) were ablated on Si (100) substrates using either the conventional pulsed laser deposition (PLD) or pulsed reactive crossed beam laser ablation (PRCLA) technique. Morphology and surface topography of the films were analysed with scanning electron microscopy (SEM) and atomic force microscopy (AFM) respectively. The chemical composition and thicknesses of the films were determined by Rutherford backscattering spectroscopy (RBS). Luminescence properties of the films were studied with cathodoluminescence (CL) spectroscopy and a 325 nm HeCd laser. Enhanced green cathodoluminescence and photoluminescence (PL) associated with 5D4→7F4 transitions in Tb3+ was observed at ∼540 nm in powder and thin film samples, and is attributed to non‐radiative energy transfer from co‐doped Ce3+. Luminescence intensities of the films and that of the SiO2:Ce,Tb powder used to make the films are compared. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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