Pulsed Laser Assisted Polycrystalline Growth of Oxide Thin Films for Efficient Processing

Abstract

ABSTRACTWe have investigated the polycrystalline growth by means of an excimer laser assisted metal organic deposition process and the strategy for the efficient growth. It was revealed that the pulsed photo thermal heating properties must be controlled by changing the laser fluence according to the substrate properties, such as thermal diffusivity. The threshold of the teff value for initial crystal nucleation is approximately 70 ns for oxide thin films. For the fabrication of good quality films with high crystallinity and without a laser ablation of the film surface, it is necessary that the irradiated laser fluence is adjusted to the conditions of teff (efficient annealing time) > 70 ns and Tmax (maximum temperature) < Tm (melting point). Obtained oxide films by using the pulsed UV laser has large crystallite size, and it well functioned to enhance physical properties of films. For further efficient growth for polycrystalline growth of the oxide films, the starting solution containing nanoparticles is very useful: it is named as photo-reaction of nanoparticles process.