Abstract
The laws determining the growth of thin silver oxide films prepared by oxidation of silver in an oxygen plasma have been studied. The growth of thin oxide films ( d < 400 Å) follows a linear law, indicating that the reaction takes place on the surface. The thickness of thicker oxide films ( d≈1000 Å) increases according to a quadratic law; the reaction speed is then determined by ionic diffusion. The diffusion coefficient for silver in AgO layers is equal to 3.7 × 10 -6 cm 2/s.
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