Abstract
Tantalum is a typical valve metal, and many investigations have been concerned with the growth of thin oxide films on its surface. Electrochemical impedance spectroscopy (EIS) was used to study the open circuit growth of thin oxide films on Ta in different acidic and neutral solutions. The effects of formation voltage, formation current density and passivation medium on the properties and stabilities of the anodic oxide films formed on Ta was also investigated. The results revealed that these films are stable in different aggressive media. The stability of the passive film was found to depend upon the passivation medium rather than the ambient electrolyte.
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