Abstract
The first successful attempt at utilising pulsed KrF (248 nm) laser annealing as a post-deposition process for RF sputtered SrS:Cu,Ag phosphor films used for thin film electroluminescent (TFEL) devices is presented. Using this novel annealing method, the luminance of the TFEL devices is observed to improve as laser fluence increases. Hence, the potential for luminance improvement of SrS:Cu,Ag TFEL devices without the need for a high temperature annealing process is demonstrated.
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