Abstract
Abstract The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing.
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