Abstract
A pulsed high-voltage ion source is considered for use in ion beam processing for the surface modification of materials, and deposition of conducting films on different substrates. The source consists of a Arkad'ev-Marx high voltage generator, a vacuum ion diode based on explosive ion emission, and a vacuum chamber as substrate holder. The ion diode allows conducting films to be deposited from metal or alloy sources, with ion beam mixing, onto substrates held at a pre-selected temperature. The main variables can be set in the ranges: voltage, 100–700 kV; pulse length, 0.3 us; beam current, 1–200 A, depending on the ion chosen. The applications of this technology are discussed in the context of semiconductor, superconductor and metallizing applications as well as the direction of future development and cost of these devices for commercial application.
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