Abstract
Amorphous Si (a-Si) films deposited by vacuum evaporation onto oxidized Si substrates with different thicknesses of SiO2 underlayer were melted and crystallized using a Xecl laser beam. The energy densities of the beam F = 150 to 450 mJ/cm 2 were chosen according to the results of calculations of the temperature evolution within the samples. A-Si films were irradiated by n =1, 10, or 100 laser pulses. The samples were analyzed by X-ray diffraction (XRD), grazing incidence XRD (GI XRD), transmission and scanning electron microscopy. The influence of the underlying SiO2 thickness on the crystallization was studied. It was shown that the complete or near-complete melting of a-Si and higher temperature gradients in the melted Si (depending on the SiO 2 thickness) are favourable conditions for Si crystallization. Overmelting into the oxide resulted in a lower quality of Si film crystallinity.
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