Abstract
Pulsed electron beams have been used to anneal ion implantation damage in InSb. The single crystals were implanted at room temperature with Be ions at doses between 5 × 10 15 and 2 × 10 16 ions cm −2. Because of a nonlinear dependence between the radiation damage and the energy of the implanted ions, the crystals were implanted at 100 and 200 keV for each dose. The lattice recovery was determined by means of α-particle channeling. It was found that pulsed electron beam annealing at energy densities below the surface melting threshold (⩽ 0.10 Jcm −2 was more effective in reordering ion-damaged crystals than either isochronal thermal annealing, or implantation at elevated substrate temperatures.
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