Abstract
ABSTRACTContinued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.
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