Abstract
A comparison has been performed of the effects of pulsed electron beam annealing (PEBA) and furnace annealing on the distribution and lattice site occupation of Cu implanted into Al single crystals. Both parameters have been determined by Rutherford backscattering and channeling measurements with 2 MeV He + ions. With furnace annealing at 300°C the Cu diffusion into the bulk was determined by the release process from the implanted layer, while for PEBA a redistribution of the copper was observed for pulses with deposited energy densities above the threshold for melting. A supersaturated solid solution with 95% (2.1 at.%) of the impurity atoms on substitutional sites was formed by the electron beam treatment. After thermal annealing only little improvement of the lattice site occupation was observed with 66% of the impurities atoms on lattice sites, however with slight displacements from the perfect positions.
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