Abstract
A single-longitudinal-mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd:YAG-pumped dye system by 80 dB, yielding 4-ns (FWHM) infrared pulses having energies of 1.2 mJ. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 mu J of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz. >
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