Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) have great potential, because of the material advantages. However, there are still some problems with AlGaN/GaN HEMTs, such as current collapse (power slump), the self-heating effect and the power scaling problem. In this paper, we have studied the self-heating effect using pulsed current-voltage (IV) and current-voltage-temperature (IVT) measurement under `the same dc bias power condition'- the isothermal condition. It was shown how self-heating affects the AlGaN/GaN HEMT's operation. It can be thought that a reason for the power slump problem of the GaN-based HEMT using a sapphire substrate and the power scaling difficulty is a thermal problem caused by the self-heating effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
