Abstract
High electron mobility transistors (HEMTs) and III-V compound materials are the key research and development fields for developing improved high-power solid-state devices and integrated circuits (ICs). GaN-based HEMTs have recently gained popularity owing to their usage in high-power and high-frequency applications. This chapter explains different types of heterostructures, principle operations, and basic structures in detail, along with different types of HEMT structures. In order to understand the operation and behavior of the High Electron Mobility Transistor (HEMT) device, internal operation with in-depth analysis is very essential. Therefore, the physics behind the operation of HEMT with proper analysis with the help of neat illustrations is also discussed. Finally, the chapter concludes with a thorough analysis of the breakthrough HEMT architecture and the difficulties posed by HEMTs.
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