Abstract
Ultrafine Si, Si3N4, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO2 laser. The mechanism of SiH4 CO2 laser-induced absorption and dissociation is discussed on the basis of the results of the spectral and time-resolved measurement of fragment chemiluminescence. The role played by the SiH2 radical in the powder formation is investigated. The quality of Si, Si3N4, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concentration is discussed.
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