Abstract
A simple method to measure the short time-domain output current of field-effect transistors (FETs) is demonstrated. By applying short gate pulses and measuring average output current, the response to very short pulses can be measured and compared with DC measurements. Applied to several novel III-V FETs, the technique shows clearly that when charge trapping and interface states affect drain currents, the intrinsic performance can be substantially better than the DC measurements indicate.
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