Abstract
Single crystals of Gd3Ga3Al2O12:Ce,B and CsI:Tl were grown by Czochralski and Bridgman techniques, respectively. While both the crystals exhibited similar emission at about 550nm, their scintillation decay times showed significantly different characteristics. The average scintillation decay time of Gd3Ga3Al2O12:Ce,B crystal was found to be about 284ns for alpha excitation compared to 108ns measured for a gamma source. On the other hand in CsI:Tl crystals, the alpha excitation resulted in a lower average decay time of 600ns compared to 1200ns with gamma excitation. Their pulse shape discrimination (PSD) for gamma and alpha radiations were studied by coupling the scintillators with photomultiplier tube or SiPM and employing an advanced digitizer as well as a conventional zero-crossing setup. In spite of having a poor α/γ light yield ratio, the PSD figure of merit and the difference of zero-crossing time in Gd3Ga3Al2O12:Ce,B crystals were found to be superior in comparison to CsI:Tl crystals.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
