Abstract
Based upon the time dependent perturbation technique for coherent ultrafast pulsed radiation-semiconductor interaction, the transient induced polarization has been considered for the analysis of change in the pulse shape while propagating through the material. Using the electromagnetic treatment, the output field amplitude is obtained. Numerical estimations are made for a sample of InSb crystal duly irradiated by lead-salt (PbEuSeTe) diode laser operating in the 2.6 – 6.6 μm wavelength range. The analytical results are in very good agreement with the available experimental and theoretical results.
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