Abstract
We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.
Highlights
When the applied voltage exceeds the coercive electric field of the ferroelectric P(VDF-TrFE) layer, the injection barrier of MoO3/Mo is lowered, and the hole current is significantly increased; the current reads 0.24 μA at 5 V
The results indicate that the degree of ferroelectric polymer domain switching was precisely controlled and remained unchanged when a proper combination of pulse duration and voltage was repeatedly applied
We demonstrated the capability of pulse-modulated multilevel data storage in organic ferroelectric resistive memory diodes
Summary
When the applied voltage exceeds the coercive electric field of the ferroelectric P(VDF-TrFE) layer, the injection barrier of MoO3/Mo is lowered, and the hole current is significantly increased; the current reads 0.24 μA at 5 V. (d) Currents through the organic ferroelectric memory diode after switching from OFF to ON vs the programming pulse time under various applied fields.
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