Abstract
Solution processed Organic Ferroelectric Memory Diodes (OFMDs) are one of the most promising non-volatile memory elements for large area flexible electronics [1] – [4] . In OFMDs it is possible to improve the ON/OFF current ratio by orders of magnitude by simply increasing the charge injection barrier [5] , [6] , at the expenses of the data retention [7] . In this work we demonstrate that it is possible to tune the ON/OFF current ratio by orders of magnitude even in the case of very low charge injection barriers, paving the way for long-missing OFMDs.
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