Abstract
A pulse amplifier EBS (Electron Bombarded Semiconductor) utilizing a grid controlled electron beam to produce an amplified current in a reverse biased semiconductor diode has been developed. Output pulses of up to 400 V with a 3 nanosecond risetime are produced with this device. The design of the electron gun and the semiconductor diode used in the EBS pulse amplifier are described along with a technique for simultaneously vacuum processing several devices. Static operating characteristics for the EBS pulse amplifier over a wide range of diode voltages and output currents are discussed, and the effect of the choice of operating point on the transient response of the EBS pulse amplifier is considered.
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