Pull-In and Release Voltage Design for Nanoelectromechanical Field-Effect Transistors

Abstract

The Euler-Bernoulli beam equation is solved simultaneously with the Poisson equation in order to accurately model the switching behavior of nanoelectromechanical field-effect transistors (NEMFETs). Using this approach, the shape of the movable gate electrode and semiconductor potential across the width of the channel are derived for the various regimes of transistor operation (before gate pull-in, after gate pull-in, and at the point of gate release). The impact of various transistor design parameters such as the body doping concentration, gate work function, gate stiffness, and as-fabricated actuation gap thickness, as well as source-to-body bias voltage and surface forces, on the gate pull-in and gate release voltages are examined. A unified pull-in/release voltage model is developed to facilitate NEMFET design for digital- and analog-circuit applications.