Abstract
AbstractPt/Ga/C and Pt/C composite nanowires have been fabricated using ion beam induced deposition (IBID) and electron beam induced deposition (EBID), respectively, with a dual beam focused ion beam system. The Pt/Ga/C composite nanowires usually exhibit a semiconducting character and their resistances increase greatly as the temperature decreases. However, the Pt/C composite nanowires show metallic behaviour above 2 K. The results suggest that EBID is more suitable than IBID for fabricating measuring electrodes for nanomaterials and devices in a single‐step process. It has also been found that the resistance of the Pt/C nanowires decreases abruptly around 20 K, which could arise from a possible new phase formed between Pt and C. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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