Abstract
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.
Highlights
Over the past two decades, there was a qualitative breakthrough in the development of thermal imaging devices based on uncooled IR focal plane arrays (FPAs)
Two types of bolometer FPAs are commonly used as sensors in uncooled IR imagers: the ones based on vanadium oxide (VOx) or amorphous silicon (α-Si:H) thermistors
Pt and poly-Si during Pt deposition on poly-Si by magnetron sputtering. (ii) About 15 nm thick granular film has formed on top of the Pt silicide as a result of the polycide formation in the solid-state reaction of the thin film of Pt with poly-Si; it is composed by grains of Pt, Si, Pt silicides and amorphous compounds of Pt, Si and O. (iii) The PtSi phase dominates in the composition of the resultant Pt silicide and electrical properties of the produced Schottky diode should be determined by the PtSi/poly-Si junction
Summary
Over the past two decades, there was a qualitative breakthrough in the development of thermal imaging devices based on uncooled IR focal plane arrays (FPAs). Another type of CMOS-compatible IR sensors are based on polySiGe thermistors; they demonstrate high sensitivity and pixel uniformity.2 They are not used for commercial production of FPAs at present. Nickel silicide Schottky diodes formed on phosphorus doped polycrystalline Si films were demonstrated to be a promising alternative to SOI-diodes in monolithic uncooled microbolometer FPAs.. Nickel silicide Schottky diodes formed on phosphorus doped polycrystalline Si films were demonstrated to be a promising alternative to SOI-diodes in monolithic uncooled microbolometer FPAs.10 Absolute values of their temperature coefficients of voltage and current were found to reach 0.6 %/°C for the forward bias and be around 2.5 %/°C for the reverse bias of the diodes despite that the studied diodes were far from perfectness. Let us proceed to the presentation of the obtained results
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