Pt Schottky contacts to n-(Ga,Mn)N

Abstract

The Schottky barrier height of Pt contacts on n-(Ga,Mn)N (n∼3.5×1017 cm−3) thin films was obtained from current–voltage measurements as a function of temperature. The resulting values ranged from 0.82±0.04 eV at 25 °C to 0.79±0.06 eV at 100 °C with saturation current densities of 4.28×10−8 A cm−2 (25 °C) to 8.42×10−5 A cm−2 (100 °C), respectively. The barrier height at room temperature obtained from an activation energy plot was 0.91±0.06 eV. The reverse current magnitude was larger than predicted by thermionic emission alone, just as in n-GaN grown in a similar fashion on Al2O3 substrates. The measured barrier height for Pt on n-(Ga,Mn)N is lower than for the value reported on n-GaN(1.08 eV).