PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs

Abstract

Surface-potential-based models, which represent the mainstream ap- proach to compact modeling of bulk MOSFETs, are now in the process of being applied to SOI devices. In this chapter we discuss two advanced SOI models—PSP- SOI-PD for partially depleted devices and PSP-SOI-DD including the dynamic de- pletion effects. Both models are based on the popular PSP model of bulk MOSFETs. The theoretical foundation of all PSP-family models is the symmetric linearization method that allows one to raise the physical contents of the compact model with- out prohibitive increase in its computational complexity. In addition to the physics- based structure of the new models inherited from bulk PSP, they account for phe- nomena specific to SOI devices (e.g. floating body, and valence band tunneling cur- rent) and include a detailed description of parasitic effects. We discuss both the theoretical developments and verification of the model against test data and TCAD simulations with particular emphasis on the interplay between the model structure and its simulation capabilities.